pnp TIP105-106-107 04/10/2012 comset semiconductors 1 | 3 semiconductors silicon darlington power transistors pnp epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are designed for general purpose amplifier and low-speed switching applications. npn complements are tip100-101-102 compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP105 -60 v tip106 -80 tip107 -100 v ceo collector-emitter voltage TIP105 -60 v tip106 -80 tip107 -100 v ebo emitter-base voltage TIP105 -5 v tip106 tip107 i c collector current TIP105 -8 a tip106 tip107 i cm collector peak current TIP105 -15 a tip106 tip107 i b base current TIP105 -1 a tip106 tip107 p t power dissipation @ t c < 25 TIP105 80 watts tip106 tip107 @ t a < 25 TIP105 2 tip106 tip107 t j junction temperature TIP105 150 c tip106 tip107 t s storage temperature range TIP105 -65 to +150 tip106 tip107
pnp TIP105-106-107 04/10/2012 comset semiconductors 2 | 3 semiconductors thermal characteristics symbol ratings value unit r thj-case from junction-case 1.56 c/w r thj-amb from junction-ambient 62.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0,v cb = -v cbo max TIP105 - - -50 a tip106 tip107 i ceo collector cutoff current i e = 0, v ce = -1/2 v ceo max TIP105 - - -50 a tip106 tip107 i ebo emitter cutoff current v eb = -5 v, i c = 0 TIP105 - - -8 ma tip106 tip107 v ceo collector-emitter breakdown voltage (*) i c = -30 ma, i b = 0 TIP105 -60 - - v tip106 -80 - - tip107 -100 - - v ce(sat) collector-emitter saturation voltage (*) i c = -3 a, i b = -6 ma TIP105 - - -2 v tip106 tip107 i c = -8 a, i b = -80 ma TIP105 - - -2.5 tip106 tip107 v be(on) base-emitter voltage (*) i c = -8 a, v ce = -4 v TIP105 - - -2.8 v tip106 tip107 h fe dc current gain (*) v ce = -4 v, i c = -3 a TIP105 1000 - 20k - tip106 tip107 v ce = -4 v, i c = -8 a TIP105 200 - - tip106 tip107 c ob output capacitance i e = 0, v cb = -10 v, f = 1mhz TIP105 - - 300 pf tip106 tip107 (*) pulse width 300 s, duty cycle 2.0%
pnp TIP105-106-107 04/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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